DMP2100UCB9 document number: ds35725 rev. 3 - 2 1 of 6 www.diodes.com july 2013 ? diodes incorporated DMP2100UCB9 new product dual p-channel enhancement mode mosfet product summary bv d1d2 r d1d2(on) i d1d2 t c = +25c -20v 100m ? @ v gs = -4.5v -4.0 a description this new generation mosfet has been designed to minimize the on- state resistance (r d1d2(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? battery management ? load switch ? battery protection features and benefits ? low q g & q gd ? dual pmos in common-source configuration ? small footprint 1.5-mm 1.5-mm ? gate esd protection to 3kv ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: u-wlb1515-9 ? terminal connections: see diagram below ? weight: 0.0018 grams (approximate) ordering information (note 4) part number case packaging DMP2100UCB9-7 u-wlb1515-9 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information top view 6w = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) 6w ym esd protected to 3kv g1 d1 d1 ss d2 d1 g2 d2 d2
DMP2100UCB9 document number: ds35725 rev. 3 - 2 2 of 6 www.diodes.com july 2013 ? diodes incorporated DMP2100UCB9 new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v d1d2 -20 v gate-source voltage v gs -6 v continuous drain current (note 5) v gs = -4.5v steady state t c = +25c t c = +70c i d1d2 -3.0 -2.1 a continuous drain current (note 6) v gs = -4.5v steady state t c = +25c t c = +70c i d1d2 -4.0 -3.0 a continuous source pin current (note 6) i s -2.0 a continuous gate clamp current (note 6) i g -0.4 a pulsed source pin current (pulse duration 10 s, duty cycle 1%) i sm -15 a pulsed drain current (pulse duration 10 s, duty cycle 1%) i dm -28 a pulsed gate clamp current (pulse duration 10 s, duty cycle 1%) i gm -6 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol v alue units total power dissipation (note 5) p d 0.8 w total power dissipation (note 6) p d 1.6 w thermal resistance, junction to ambient (note 5) r ja 152 c/w thermal resistance, junction to ambient (note 6) r ja 65 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv d1d2 -20 ? ? v v gs = 0v, i d1d2 = -250 a gate-source breakdown voltage bv gss -6.1 ? ? v i gs = -250 a, v d1d2 = 0v zero gate voltage drain current @t c = +25c i dds ? ? -1 a v d1d2 = -16v, v gs = 0v gate-source leakage i gss ? ? -100 na v gs = -6v, v ds = 0v on char a cteristics (note 7) gate threshold voltage v gs(th) -0.4 -0.7 -0.9 v v d1d2 = v gs , i ds = -250 a static drain-source on-resistance r d1d2(on) ? ? ? 80 100 m ? v gs = -4.5v, i d1d2 =- 1a 105 130 v gs = -2.5v, i d1d2 = -1a 140 175 v gs = -1.8v, i d1d2 = -1a forward transfer admittance |y fs | ? 5.3 ? s v d1d2 = -10v, i d1d2 = -1a diode characteristics diode forward voltage (note 6) v sd ? -0.7 -1 v v gs = 0v, i d1d2 = -1a reverse recovery charge q rr ? 18 ? nc v dd = -9.5v, i f = -1a, di/dt = 200a/ s reverse recovery time t rr ? 34 ? ns dynamic characteristics (note 8) input capacitance c iss ? 232 310 pf v d1d2 = -10v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 107 150 pf reverse transfer capacitance c rss ? 43.5 55 pf total gate charge (4.5v) q g ? 3.3 4.2 nc v gs = -4.5v, v d1d2 = -10v, i d1d2 = -1a gate-source charge q gs ? 0.3 ? nc gate-drain charge q gd ? 0.6 ? nc gate charge at v th q g(th) ? 0.2 ? nc turn-on delay time t d(on) ? 8.5 ? ns v d1d2 = -10v, v gs = -4.5v, i d1d2 = -1a, r g = 30 ? , turn-on rise time t r ? 7.0 ? ns turn-off delay time t d(off) ? 47 ? ns turn-off fall time t f ? 28 ? ns notes: 5. device mounted on fr-4 pcb with minimum recommended pad layout. 6. device mounted on fr4 material with 1-inch 2 (6.45-cm 2 ), 2-oz. (0.071-mm thick) cu 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing.
DMP2100UCB9 document number: ds35725 rev. 3 - 2 3 of 6 www.diodes.com july 2013 ? diodes incorporated DMP2100UCB9 new product 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 -v , drain -source voltage(v) fig. 1 typical output characteristics ds -i , d r ain c u r r en t (a) d v = -1.2v gs v= -1.5v gs v = -1.8v gs v = -2.5v gs v = -4.5v gs 0 0.5 1.0 1.5 2.0 -v , gate-source voltage (v) gs fig. 2 typical transfer characteristics -i , d r ain c u r r en t (a) d t = 150 c a ? t = 125 c a ? t = 85c a ? t = 25c a ? t = -55c a ? v= -5.0v ds -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 3 on-resistance variation with temperature 0.5 0.7 0.9 1.1 1.3 1.5 1.7 r , d r ai n -s o u r c e on-resistance (normalized) ds(on) -v , gate source voltage (v) gate voltage gs fig. 4 typical on-resistance vs. drain current and 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 012 3456 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 5 gate threshold variation vs. ambient temperature a -v , g a t e t h r es h o ld v o l t a g e(v) gs(th) 0 1 2 3 4 5 6 7 8 9 10 0.4 0.6 0.8 1.0 1.2 1.4 -v , source-drain voltage (v) fig. 6 diode forward voltage vs. current sd -i , s o u r c e c u r r e n t (a) s
DMP2100UCB9 document number: ds35725 rev. 3 - 2 4 of 6 www.diodes.com july 2013 ? diodes incorporated DMP2100UCB9 new product 0 5 10 15 20 -v , drain-source voltage (v) fig. 7 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e (p f ) t c oss c rss f = 1mhz c iss 0 1 2 3 4 5 6 01 2 34 q , total gate charge (nc) fig. 8 gate-charge characteristics g -v , g a t e-s o u r c e v o l t a g e (v) gs 0.1 1 10 100 -v , drain-source voltage (v) fig. 9 soa, safe operation area ds t = 150c t = 25c single pulse dut on 1 * mrp board v = -6v j(max) a gs 0.01 0.1 1 10 100 -i , d r ain c u r r en t (a) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 10 transient thermal resistance r (t) = r(t) * r ?? ja ja r = 70c/w duty cycle, d = t1/ t2 ? ja 0.001 0.01 0.1 r(t), t r ansien t t h e r mal r esis t an c e 1 d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse
DMP2100UCB9 document number: ds35725 rev. 3 - 2 5 of 6 www.diodes.com july 2013 ? diodes incorporated DMP2100UCB9 new product package outline dimensions please see ap02002 at http://www.diodes.com/dat asheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. u-wlb1515-9 dim min max typ a - 0.62 - a2 - 0.36 0.36 a3 0.020 0.030 0.025 b 0.27 0.37 0.32 d 1.47 1.51 1.49 e 1.47 1.51 1.49 e - - 0.50 all dimensions in mm dimensions value (in mm) c 0.50 c1 1.00 c2 1.00 d 0.25 d e pin id e e 6x-? b e a2 a seating plane a3 e c c1 c d c2
DMP2100UCB9 document number: ds35725 rev. 3 - 2 6 of 6 www.diodes.com july 2013 ? diodes incorporated DMP2100UCB9 new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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